[新聞] 據報導 Samsung 和 AMD 簽署一份價值30

原文標題：Samsung Reportedly Signs USD 3 Billion HBM3e Deal with AMD
原文連結：https://reurl.cc/4r46d2
發布時間：04/26/2024
原文內容：
According to a report from Korean media outlet viva100, Samsung has signed a new
USD 3 billion agreement with processor giant AMD to supply HBM3e 12-layer DRAM
for use in the Instinct MI350 series AI chips. Reportedly, Samsung has also agre
ed to purchase AMD GPUs in exchange for HBM products, although details regarding
the specific products and quantities involved remain unclear.

Earlier market reports indicated that AMD plans to launch the Instinct MI350 ser
ies in the second half of the year as an upgraded version of the Instinct MI300
series. The MI350 series is reportedly expected to adopt TSMC’s 4-nanometer pro
cess, delivering improved computational performance with lower power consumption
. The inclusion of 12-layer stacked HBM3e memory will enhance both bandwidth and
capacity.

In October 2023, at Samsung Memory Tech Day 2023, Samsung announced the launch o
f a new HBM3e codenamed “Shinebolt.” In February of this year, Samsung unveile
d the industry’s first HBM3e 12H DRAM, featuring 12 layers and a capacity of 36
GB, marking the highest bandwidth and capacity HBM product to date. Samsung has
provided samples and plans to commence mass production in the second half of the
year.

Samsung’s HBM3e 12H DRAM offers up to 1280GB/s bandwidth and 36GB capacity, rep
resenting a 50% increase compared to the previous generation of eight-layer stac
ked memory. Advanced Thermal Compression Non-Conductive Film (TC NCF) technology
enables the 12-layer stack to meet HBM packaging requirements while maintaining
chip height consistency with eight-layer chips.

Additionally, optimizing the size of chip bumps improves HBM thermal performance
, with smaller bumps located in signal transmission areas and larger bumps in he
at dissipation areas, contributing to higher product yields.

The adoption of HBM3e 12-layer DRAM over HBM3e 8-layer DRAM has shown an average
speed improvement of 34% in AI applications, with inference service users incre
asing by over 11.5 times.

In view of this matter, industry sources cited by the report from TechNews has i
ndicated that this deal is separate from negotiations between AMD and Samsung Fo
undry for wafer production. AMD plans to assign a portion of new CPUs/GPUs to Sa
msung for manufacturing, which is unrelated to this specific transaction.

翻譯：
據韓國媒體viva100報導，三星已與AMD簽署了一項價值30億美元的新協議，以供應HBM3e 12
層DRAM，用於MI350系列AI晶片。據報導，三星還同意購買AMD的GPU，以換取HBM產品，雖然
有關具體產品和數量的細節仍不清楚。

早期的市場報告顯示，AMD計劃在下半年推出Instinct MI350系列，作為Instinct MI300系
列的升級版。據報導，MI350系列預計將採用TSMC的4nn製成，以降低功耗提高計算性能。12
層堆疊的HBM3e記憶體的加入將提高帶寬和容量。

在2023年10月的三星記憶體技術日2023上，三星宣布推出了一款名為“Shinebolt”的新型H
BM3e。今年2月，三星推出了業界首款HBM3e 12H DRAM，擁有12層，容量達36GB，是迄今為
止帶寬和容量最高的HBM產品。三星已提供樣品，計劃在下半年開始大規模生產。

三星的HBM3e 12H DRAM提供高達1280GB/s的帶寬和36GB的容量，較前一代八層堆疊記憶體提
高了50%。先進的熱壓縮非導電膜（TC NCF）技術使12層堆疊能夠滿足HBM封裝要求，同時保
持與八層晶片的晶片高度一致性。

此外，優化晶片凸點的尺寸可以提高HBM的熱性能，將較小的凸點位於信號傳輸區域，較大
的凸點位於散熱區域，有助於提高產品產量。

採用HBM3e 12層DRAM而不是HBM3e 8層DRAM，在AI應用中平均速度提高了34％，推理服務用
戶增加了11.5倍。

鑑於此事，報導中引用的TechNews的行業消息來源指出，此交易與AMD和三星Foundry就晶圓
生產進行的談判是分開的。AMD計劃將部分新CPU/GPU分配給三星進行製造，與此特定交易無
關。


心得/評論：
據我所知目前最先進的HBM3e應該是Micron 再來Sk Hynix, 個人推測蘇媽有可能是產能問題
才找上Samsung

另外 之前AMD合作的雲端服務大廠是不是只剩Microsoft了？博通跟Nvidia又更穩了！！


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